Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses
DC Field | Value | Language |
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dc.contributor.author | Ismail, Muhammad | - |
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Abbas, Haider | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Kim, Sungjun | - |
dc.date.accessioned | 2021-07-30T04:50:09Z | - |
dc.date.available | 2021-07-30T04:50:09Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1478 | - |
dc.description.abstract | In this work, ZnSnO-based resistive switching (RS) devices were fabricated with different top electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic systems. The Ta/ZnSnO/TiN device exhibits excellent endurance (2000 DC cycles), longer retention (104 s), reliable multilevel retention (103 s) with six distinct resistance states via controlling the reset-stop voltage, and low forming/set voltages with high uniformity. Besides, complementary RS (CRS) behavior is observed in Ta/ZnSnO/TiN device at appropriate current compliance (CC, 5 mA) instead of low (600 μA) and high (10 mA) CC, respectively. X-ray photoelectron spectroscopy (XPS) analysis confirms that both TaO and TiON interface layers are formed at the top Ta/ZnSnO and bottom ZnSnO/TiN interfaces, which are found responsible for CRS behavior. Furthermore, XPS analysis also confirmed that the concentration of oxygen vacancies near the bottom ZnSnO/TiON interface is greater than the oxygen vacancies concentration near the top TaO/ZnSnO interface. Based on the XPS analysis, the switching phenomenon is confined in ZnSnO/TaON bottom interface because of its higher oxygen vacancy levels (prevent oxygen loss) in contrast to the TaO/ZnSnO top interface where the ZnSnO layer acts as series resistances in between these two interfaces. The basic features of an artificial synapse, LTP/ LTD, PPF/ PPD, and STDP, were successfully emulated using a Ta/ZnSnO/TiN device, suggesting potential applications for neuromorphic hardware systems. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.158416 | - |
dc.identifier.scopusid | 2-s2.0-85099439975 | - |
dc.identifier.wosid | 000624934000066 | - |
dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.862, pp.1 - 10 | - |
dc.relation.isPartOf | Journal of Alloys and Compounds | - |
dc.citation.title | Journal of Alloys and Compounds | - |
dc.citation.volume | 862 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | Electric resistance | - |
dc.subject.keywordPlus | Oxygen vacancies | - |
dc.subject.keywordPlus | Tantalum metallography | - |
dc.subject.keywordPlus | Tantalum oxides | - |
dc.subject.keywordPlus | Titanium compounds | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Zinc compounds | - |
dc.subject.keywordPlus | Artificial synapse | - |
dc.subject.keywordPlus | Neuromorphic hardwares | - |
dc.subject.keywordPlus | Neuromorphic systems | - |
dc.subject.keywordPlus | Oxygen vacancy level | - |
dc.subject.keywordPlus | Resistance state | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Series resistances | - |
dc.subject.keywordPlus | Switching phenomenon | - |
dc.subject.keywordPlus | Tin compounds | - |
dc.subject.keywordAuthor | Impact of active electrodes | - |
dc.subject.keywordAuthor | Effect of current compliance limitations | - |
dc.subject.keywordAuthor | Complementary resistive switching | - |
dc.subject.keywordAuthor | Synaptic plasticity | - |
dc.subject.keywordAuthor | Neuromorphic computing | - |
dc.subject.keywordAuthor | Filamentary switching | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838820347794?via%3Dihub | - |
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