Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure
- Authors
- Park, Chulho; Duong, Ngoc Thanh; Bang, Seungho; Nguyen, Duc Anh; Oh, Hye Min; Jeong, Mun Seok
- Issue Date
- Nov-2018
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.10, no.43, pp.20306 - 20312
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 10
- Number
- 43
- Start Page
- 20306
- End Page
- 20312
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/148990
- DOI
- 10.1039/C8NR07219A
- ISSN
- 2040-3364
- Abstract
- Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regimes. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms - direct tunneling, Fowler-Nordheim tunneling, and the space charge region - depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (approximate to 0.56), power conversion (approximate to 1.5%), and external quantum efficiency (approximate to 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/148990)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.