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Room temperature ferromagnetic and semiconducting properties of graphene adsorbed with cobalt oxide using electrochemical method
- Issue Date
- Dec-2017
- Publisher
- Elsevier BV
- Keywords
- Graphene; Ferromagnetic semiconductor; CoO; SQUID
- Citation
- Journal of Magnetism and Magnetic Materials, v.444, pp 361 - 363
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Volume
- 444
- Start Page
- 361
- End Page
- 363
- ISSN
- 0304-8853
1873-4766
- Abstract
- We report the room temperature ferromagnetic properties of graphene adsorbed by cobalt oxide using electrochemical method. The cobalt oxide doping onto graphene was carried out in 0.1 M LiCoO2/DIwater solution. The doped graphene thin film was determined to be a single layer from Raman analysis. The CoO doped graphene has a clear ferromagnetic hysteresis at room temperature and showed a remnant magnetization, 128.2 emu/cm(3). The temperature dependent conductivity of the adsorbed graphene showed the semiconducting behavior and a band gap opening of 0.12 eV.
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