One-step micropatterning of highly-ordered semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) films by a selective shear and detachment process
- Authors
- Chang, Jiyoun; Jung, Hee Joon; Jeong, Huisu; Park, Youn Jung; Sung, Jinwoo; Kang, Seok Ju; Jung, Gun Young; Sung, Myung M.; Park, Cheolmin
- Issue Date
- Jan-2011
- Publisher
- ELSEVIER
- Keywords
- Ferroelectric polymer; Static shear; Detachment; Micropattern; Crystal orientation; Non-volatile memory
- Citation
- ORGANIC ELECTRONICS, v.12, no.1, pp.98 - 107
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 12
- Number
- 1
- Start Page
- 98
- End Page
- 107
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151339
- DOI
- 10.1016/j.orgel.2010.10.007
- ISSN
- 1566-1199
- Abstract
- We present a one-step route for micropatterning a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film with both molecular and microstructural crystal control over a large area. The method is based on the static mechanical shearing and ;subsequent detachment of a film spin coated on pre-patterned Al which has been lithographically prepared on a SiO2 substrate under appropriate thermal conditions. Selective detachment of the film in contact with the SiO2 substrate gave rise to micropatterns of PVDF-TrFE film positioned only on the Al regions. Further, the PVDF-TrFE film showed 25-nm-thick crystalline lamellae aligned perpendicular to the shear direction, wherein the c axis of the crystals was globally ordered parallel to the shear direction. The sheared and patterned PVDF-TrFE thin films are readily incorporated into non-volatile memory units of metal/ferroelectric/metal capacitors and bottom gate-top contact field effect transistors, leading to arrays of memory devices with enhanced performance.
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