Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer
- Issue Date
- Nov-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- InGaZnO; thin film transistor; MoS2; photoresponsivity
- Citation
- NANOTECHNOLOGY, v.28, no.47, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 28
- Number
- 47
- Start Page
- 1
- End Page
- 6
- ISSN
- 0957-4484
- Abstract
- We report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (alpha-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS2) flakes. The electrical characteristics of the alpha-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm(2) V-1 s(-1) and current on/off ratio up to 10(7). By taking advantages of the high quality alpha-IGZO and MoS2 light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range. The alpha-IGZO channel detector capped by MoS2 show a photo-responsivity of approximately 14.9 mAW(-1) at 1100 nm wavelength, which is five times higher than of the alpha-IGZO device without MoS2 layer.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.