Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductoropen access
- Authors
- Lee, Juwon; Nagarajan, Ganapathi Subramaniam; Shon, Yoon; Kwon, Younghae; Kang, Tae Won; Kim, Deuk Yong; Kim, Hyungsang; Im, Hyunsik; Park, Chang-Soo; Kim, Eun Kyu
- Issue Date
- Aug-2017
- Publisher
- American Institute of Physics Inc.
- Citation
- AIP Advances, v.7, no.8, pp 1 - 8
- Pages
- 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP Advances
- Volume
- 7
- Number
- 8
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151882
- DOI
- 10.1063/1.4994044
- ISSN
- 2158-3226
2158-3226
- Abstract
- Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 x 10(-4) Omega cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 x 10(-4) emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.
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