Observation of giant magnetoresistance in CoFeN/AlOx/CoFeN magnetic tunneling junctions employing a nitrogen-doped amorphous CoFeN free layer electrode
- Authors
- Yoon, Kap Soo; Hong, Jin Pyo
- Issue Date
- Jan-2017
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.110, no.1, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 110
- Number
- 1
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153106
- DOI
- 10.1063/1.4973407
- ISSN
- 0003-6951
- Abstract
- We examine the crystallographic and magnetic features of nitrogen-doped amorphous CoFe (CoFeN) electrodes for application as ferromagnetic free layers in magnetic tunnel junctions, in which precise control of the nitrogen content is crucial for achieving the desirable magnetic features. Incorporating nitrogen into the CoFe layer during growth provides numerous benefits including a remarkably reduced coercivity of 5 Oe, a phase transition from polycrystalline to amorphous, a low magnetization of 294 emu/cm(3), and an enhanced thermal stability up to 400 degrees C. A high magnetic resistance ratio of about 220% was also obtained for annealed in-plane CoFeN/AlOx/CoFeN magnetic tunneling junctions containing a 1.2-nm-thick amorphous AlOx tunnel barrier. We anticipate that our experimental findings will aid in the development of a variety of future spintronic devices.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.