Oxide stoichiometry-controlled TaOx-based resistive switching behaviors
- Authors
- Baek, Gwang Ho; Lee, Ah Rahm; Kim, Tae Yoon; Im, Hyun Sik; Hong, Jin Pyo
- Issue Date
- Oct-2016
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.109, no.14, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 109
- Number
- 14
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153888
- DOI
- 10.1063/1.4963884
- ISSN
- 0003-6951
- Abstract
- We examine the influence of variable oxygen concentration in TaOx active layers on the forming process and bipolar resistive switching (BRS) features of TaOx-based resistive switching cells. TaOx active layers prepared using various rf sputtering powers were systematically analyzed to identify the relation between initial compositions and BRS behavior. Proper control of oxygen vacancy concentration was clearly identified as a basic factor in ensuring typical BRS features without affecting the structural properties. We describe the possible origins of both conduction and switching based on the variation of oxygen concentrations initially provided by the growth conditions.
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