A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition
- Authors
- Han, Kyu Seok; Kalode, Pranav Y.; Lee, Yong-Eun Koo; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo
- Issue Date
- Mar-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.8, no.9, pp.5000 - 5005
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 8
- Number
- 9
- Start Page
- 5000
- End Page
- 5005
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/154989
- DOI
- 10.1039/c5nr08016a
- ISSN
- 2040-3364
- Abstract
- Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.
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