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Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer
- Issue Date
- Nov-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Fe/MgO; interfacial anisotropy; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA)
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.51, no.11, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 51
- Number
- 11
- Start Page
- 1
- End Page
- 4
- ISSN
- 0018-9464
- Abstract
- Ta/Ru/Ta/Co/Fe/MgO film is studied to investigate the separate roles of Co and Fe in perpendicular magnetic anisotropy. Perpendicular magnetization is successfully obtained in this structure after a field annealing process (275 degrees C, 3 T, 30 min). Surface magnetic anisotropy at the Fe/MgO interface induces perpendicular magnetization for the Co/Fe bilayer with the critical contribution of the inserted Co. Magnetization properties resulting from the use of various Co and Fe layer thicknesses in the range of 0.36-0.6 nm (Co) and 0.52-0.91 nm (Fe) are analyzed, indicating the formation of a magnetic dead layer between the Co layer and the Ta seed layer. The maximum effective anisotropy energy (K-eff) is estimated as 1.63x10(5) J/m(3) for Co (0.36 nm)/Fe (0.65 nm).
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Related Researcher
- Park, Wan jun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)