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Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature
- Issue Date
- Oct-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Resistive Switching; Yttrium Oxide; Atomic Layer Deposition
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.7586 - 7589
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 15
- Number
- 10
- Start Page
- 7586
- End Page
- 7589
- ISSN
- 1533-4880
- Abstract
- Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 degrees C to 350 degrees C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 degrees C.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)