Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang Ho | - |
dc.contributor.author | Oh, Dong Ju | - |
dc.contributor.author | Hwang, Ah Young | - |
dc.contributor.author | Han, Dong Suk | - |
dc.contributor.author | Kim, Shin | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Park, Jong Wan | - |
dc.date.accessioned | 2022-07-15T21:44:25Z | - |
dc.date.available | 2022-07-15T21:44:25Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156654 | - |
dc.description.abstract | This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thinfilm transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm(2)/Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1109/LED.2015.2445348 | - |
dc.identifier.scopusid | 2-s2.0-84937910684 | - |
dc.identifier.wosid | 000358570300022 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.802 - 804 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 802 | - |
dc.citation.endPage | 804 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordAuthor | Ca-doped Cu | - |
dc.subject.keywordAuthor | low resistivity | - |
dc.subject.keywordAuthor | a-IGZO | - |
dc.subject.keywordAuthor | diffusion barrier | - |
dc.subject.keywordAuthor | high performance | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7123601 | - |
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