Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode
- Authors
- Lee, Sang Ho; Oh, Dong Ju; Hwang, Ah Young; Han, Dong Suk; Kim, Shin; Jeong, Jae Kyeong; Park, Jong Wan
- Issue Date
- Aug-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ca-doped Cu; low resistivity; a-IGZO; diffusion barrier; high performance; thin-film transistors
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.802 - 804
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 8
- Start Page
- 802
- End Page
- 804
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156654
- DOI
- 10.1109/LED.2015.2445348
- ISSN
- 0741-3106
- Abstract
- This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thinfilm transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm(2)/Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances.
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