Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor

Abstract

Nanoscale (similar to 28 nm) non-volatile multi-level conductive-bridging-random-access-memory (CBRAM) cells are developed by using a CuO solid-electrolyte, providing a V-set of similar to 0.96 V, a V-reset of similar to-1.5 V, a similar to 1 x 10(2) memory margin, similar to 3 x 10(6) write/erase endurance cycles with 100 mu s AC pulse, similar to 6.63 years retention time at 85 degrees C, similar to 100 ns writing speed, and multi-level (four-level) cell operation. Their nonvolatile memory cell performance characteristics are intensively determined by studying material properties such as crystallinity and poly grain size of the CuO solid-electrolyte and are found to be independent of nanoscale memory cell size. In particular, the CuO solid-electrolyte-based CBRAM cell vertically connecting with p/n/p-type oxide (CuO/IGZO/CuO) selector shows the operation of 1S(selector) 1R(resistor), demonstrating a possibility of cross-bar memory-cell array for realizing terabit-integration non-volatile memory cells.