Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films
- Authors
- Oh, Dohyun; Yun, Dong Yeol; Lee, Nam Hyun; Kim, Tae Whan
- Issue Date
- Jul-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Nonvolatile memory devices; Gallium zinc tin oxide; Solution process; Bipolar resistive switching behavior; Conduction mechanisms
- Citation
- THIN SOLID FILMS, v.587, pp.71 - 74
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 587
- Start Page
- 71
- End Page
- 74
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156888
- DOI
- 10.1016/j.tsf.2014.12.021
- ISSN
- 0040-6090
- Abstract
- Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn - O, Ga - O, and Sn - O bonds. Current-voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model.
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