Enhancement of memory windows in Pt/Ta2O5 (-) (x)/Ta bipolar resistive switches via a graphene oxide insertion layer
- Authors
- Chung, Je Bock; Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Lee, Min Yong; Yoon, Hee Wook; Park, Ho Bum; Hong, Jin Pyo
- Issue Date
- Jul-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Resistive switching; Graphene oxide; Bipolar resistive switches; Resistive random-access memory
- Citation
- THIN SOLID FILMS, v.587, pp.57 - 60
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 587
- Start Page
- 57
- End Page
- 60
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156889
- DOI
- 10.1016/j.tsf.2014.11.032
- ISSN
- 0040-6090
- Abstract
- The influence of a graphene oxide (GO) layer on Pt/Ta2O5 - x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5-x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer thickness represents the variation of the forming voltage and on/off ratio, demonstrating enhanced memory windows. The possible nature of the enhanced switching events is described by adapting the creation of strong conductive filaments driven by a greater resistive GO layer.
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