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Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer
- Authors
- Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, Moon; Park, Jea-Gun
- Issue Date
- May-2015
- Publisher
- Institute of Physics Publishing
- Keywords
- spin transfer torque; magnetic random access memory; magnetic tunnle junctions
- Citation
- Nanotechnology, v.26, no.19, pp 1 - 9
- Pages
- 9
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Nanotechnology
- Volume
- 26
- Number
- 19
- Start Page
- 1
- End Page
- 9
- ISSN
- 0957-4484
1361-6528
- Abstract
- The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.
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