High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application
- Authors
- Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; ou, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino
- Issue Date
- Apr-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- High mobility; High-k inorganic dielectric; Solution processed dielectric and channel
- Citation
- THIN SOLID FILMS, v.589, pp.90 - 94
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 589
- Start Page
- 90
- End Page
- 94
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157443
- DOI
- 10.1016/j.tsf.2015.04.035
- ISSN
- 0040-6090
- Abstract
- This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 degrees C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm(2)/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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