Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structureopen access
- Authors
- Roh, Il Pyo; Song, Yun Heub; Song, Jin Dong
- Issue Date
- Apr-2015
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- switching device; UHV-CVD; SiGe; N plus PN; STT-MRAM
- Citation
- IEICE ELECTRONICS EXPRESS, v.12, no.7, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE ELECTRONICS EXPRESS
- Volume
- 12
- Number
- 7
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157603
- DOI
- 10.1587/elex.12.20150098
- ISSN
- 1349-2543
- Abstract
- We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I-on/I-off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and Ion/Ioff ratio. After the simulation, a junction device with N+ Si0.8Ge0.2/P Si/N+ Si0.8Ge0.2 and an area of 4 x 4 um(2) is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM.
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