Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions
- Authors
- Chae, Kyo-Suk; Park, Jea-Gun
- Issue Date
- Apr-2015
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.117, no.15, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 117
- Number
- 15
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157609
- DOI
- 10.1063/1.4918307
- ISSN
- 0021-8979
- Abstract
- For Co2Fe6B2/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd](n)-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t(Fe)) between the Co2Fe6B2 pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t(Fe) increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd](n)-SyAF. However, it abruptly decreased by further increasing t(Fe) in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co2Fe6B2 pinned layer. Thus, the TMR ratio peaked at t(Fe) = 0.4 nm: i.e., 120% at 29 Omega mu m(2).
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