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The variation of the enhanced PL efficiency of Y2O3:Eu3+ phosphor films with the height to the ZrO2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography

Authors
Park, ChulkyunKim, HyojunPark, In-SungKo, Ki-YoungKim, Ki-KangLee, Byoung HunAhn, Jinho
Issue Date
Mar-2015
Publisher
ELSEVIER
Keywords
Reverse nano-imprint; ZrO2 nanoparticle; TPT/PDMS stamp; Photonic crystal; Phosphor film
Citation
MICROELECTRONIC ENGINEERING, v.136, pp.48 - 50
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
136
Start Page
48
End Page
50
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157810
DOI
10.1016/j.mee.2015.03.035
ISSN
0167-9317
Abstract
We developed a zirconium oxide (ZrO2) nanoparticle-assisted photonic structure for improving the light extraction efficiency of Y2O3:Eu3+ phosphor films by reverse nano-imprint lithography approach. The structural effect of a two-dimensional (2D) ZrO2 nanoparticle photonic crystal (PC) pattern on the extraction efficiency of photoluminescence (PL) from the underlying Y2O3:Eu3+ phosphor film was investigated. The 2D photonic crystal structure was fabricated using a reverse nano-imprint process with a ZrO2 nanoparticle solution as a nano-imprint resin and a patterned trimethylolpropane propoxylate triacrylate (TPT)/polydimethylsiloxane (PDMS) stamp as a mold. We controlled height of ZrO2 nanoparticle patterns in the range 190-370 nm by varying the height of master mold. This simple process results in 6.9 times improvement of extraction efficiency for a 2D ZrO2 nanoparticle-assisted photonic crystal pattern (h = similar to 370 nm) compared to the conventional Y2O3:Eu3+ thin-film phosphors.
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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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