Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer
- Authors
- Son, Seokki; Yu, Sunmoon; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan
- Issue Date
- Jan-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.106, no.2, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 106
- Number
- 2
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158173
- DOI
- 10.1063/1.4905634
- ISSN
- 0003-6951
- Abstract
- We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.
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