N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석open accessAnalysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste
- Other Titles
- Analysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste
- Authors
- Park, Tae Jun; Byun, Jong Min; Kim, Young Do
- Issue Date
- Jan-2015
- Publisher
- MATERIALS RESEARCH SOC KOREA
- Keywords
- solar cell; n-type; thin wafer; bowing; Al doped p(+) layer
- Citation
- KOREAN JOURNAL OF MATERIALS RESEARCH, v.25, no.1, pp.16 - 20
- Indexed
- SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF MATERIALS RESEARCH
- Volume
- 25
- Number
- 1
- Start Page
- 16
- End Page
- 20
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158216
- DOI
- 10.3740/MRSK.2015.25.1.16
- ISSN
- 1225-0562
- Abstract
- In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 mu m, 130 mu m, 140 mu m. Formation of the Al doped p(+) layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p(+) layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm(2) of Al paste, wafer bowing in a thickness of 140 mu m reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 mu m reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped p(+) layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm(2) in a wafer with a thickness of 120 mu m.
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