Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition

Abstract

We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 degrees C to 300 degrees C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.