Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
- Authors
- Park, Jae-Hyung; Moon, Dae-Yong; Han, Dong-Suk; Kang, Yu-Jin; Shin, So-Ra; Jeon, Hyung-Tag; Park, Jong-Wan
- Issue Date
- Nov-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Cobalt; Atomic layer deposition; Direct plating; CCTBA; Copper interconnect
- Citation
- SURFACE & COATINGS TECHNOLOGY, v.259, pp.98 - 101
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE & COATINGS TECHNOLOGY
- Volume
- 259
- Start Page
- 98
- End Page
- 101
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158774
- DOI
- 10.1016/j.surfcoat.2014.05.005
- ISSN
- 0257-8972
- Abstract
- It is challenging to produce reliable Cu wiring on the nanometer scale for scaled-down devices. We studied the use of Co films deposited by plasma-enhanced atomic layer deposition (PEALD) using dicobalt hexacarbonyl tert-butylacetylene (CCTBA) as a precursor for Cu direct plating. Electrical properties of PEALD Co films of sub-20 nm thickness were determined by assessing continuities, morphologies, and impurities. To decrease the resistivity of Co films, a TaNx substrate was pre-treated with H-2 plasma and the flow rate of H-2 gas during CCTBA feeding and reactant feeding pulses was increased. Co films were deposited on a 3 nm-thick TaNx-covered SiO2 substrate with 24 nm-deep trenches, and Cu direct plating was successfully performed under conventional conditions.
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