Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode
DC Field | Value | Language |
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dc.contributor.author | Seung, Hyun-Min | - |
dc.contributor.author | Kwon, Kyoung-Cheol | - |
dc.contributor.author | Lee, Gon-Sub | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T02:53:30Z | - |
dc.date.available | 2022-07-16T02:53:30Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159033 | - |
dc.description.abstract | Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a crossbar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 x 10(5) s with a memory margin of 9.2 x 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 x 10(5), and bending-fatigue-free cycles of similar to 1x10(3) with a memory margin (I-on/I-off) of 3.3 x 10(5). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1088/0957-4484/25/43/435204 | - |
dc.identifier.scopusid | 2-s2.0-84907903478 | - |
dc.identifier.wosid | 000344159600004 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.25, no.43, pp.1 - 7 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 25 | - |
dc.citation.number | 43 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CBRAM | - |
dc.subject.keywordPlus | conductive-bridging | - |
dc.subject.keywordPlus | Flexible memory | - |
dc.subject.keywordPlus | Non-volatile | - |
dc.subject.keywordPlus | Organic memory | - |
dc.subject.keywordPlus | Polymer memory | - |
dc.subject.keywordAuthor | flexible memory | - |
dc.subject.keywordAuthor | CBRAM | - |
dc.subject.keywordAuthor | nonvolatile | - |
dc.subject.keywordAuthor | polymer memory | - |
dc.subject.keywordAuthor | organic memory | - |
dc.subject.keywordAuthor | conductive-bridging | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/25/43/435204 | - |
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