Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode
- Authors
- Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun
- Issue Date
- Oct-2014
- Publisher
- IOP PUBLISHING LTD
- Keywords
- flexible memory; CBRAM; nonvolatile; polymer memory; organic memory; conductive-bridging
- Citation
- NANOTECHNOLOGY, v.25, no.43, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 25
- Number
- 43
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159033
- DOI
- 10.1088/0957-4484/25/43/435204
- ISSN
- 0957-4484
- Abstract
- Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a crossbar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 x 10(5) s with a memory margin of 9.2 x 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 x 10(5), and bending-fatigue-free cycles of similar to 1x10(3) with a memory margin (I-on/I-off) of 3.3 x 10(5).
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