Improvement of thermal stability of nickel silicide film using NH3 plasma treatment
DC Field | Value | Language |
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dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Kim, Jinho | - |
dc.contributor.author | Kang, Chunho | - |
dc.contributor.author | Yuh, Junhan | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-07-16T03:10:49Z | - |
dc.date.available | 2022-07-16T03:10:49Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159235 | - |
dc.description.abstract | In this study, the effects of NH3 plasma pre-treatment on the characteristics of NiSi films were investigated. Nickel film was deposited on a Si(100) substrate by meal-organic chemical vapor deposition (MOCVD) using Ni(Pr-i-DAD)(2) as a Ni precursor and NH3 gas as a reactant. Before the Ni deposition, silicon substrate was treated by NH3 plasma with various flow rates to adjust the amount of inserted hydrogen and nitrogen atoms. The Ni films showed a considerable low sheet resistance around 12 Omega/square, irrespective of the NH3 plasma pre-treatment conditions. The sheet resistance of the all Ni films was decreased after annealing at 500 degrees C due to formation of a low resistive NiSi phase. NiSi films with a high flow rate of NH3 plasma pre-treatment exhibited a lower sheet resistance and smoother interface between NiSi and the Si substrate than the low flow rate of the NH3 plasma pre-treated NiSi films because lots of nitrogen atoms incorporated at grain boundary of NiSi which result in reduce total surface/interface energy of NiSi and enhancement interface characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Improvement of thermal stability of nickel silicide film using NH3 plasma treatment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.7567/JJAP.53.095506 | - |
dc.identifier.scopusid | 2-s2.0-84988811906 | - |
dc.identifier.wosid | 000342864700043 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.9, pp.1 - 6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NISI FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | COSI2 | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.53.095506 | - |
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