Improvement of thermal stability of nickel silicide film using NH3 plasma treatment
- Authors
- Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Jang, Woochool; Kim, Jinho; Kang, Chunho; Yuh, Junhan; Jeon, Hyeongtag
- Issue Date
- Sep-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.9, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 53
- Number
- 9
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159235
- DOI
- 10.7567/JJAP.53.095506
- ISSN
- 0021-4922
- Abstract
- In this study, the effects of NH3 plasma pre-treatment on the characteristics of NiSi films were investigated. Nickel film was deposited on a Si(100) substrate by meal-organic chemical vapor deposition (MOCVD) using Ni(Pr-i-DAD)(2) as a Ni precursor and NH3 gas as a reactant. Before the Ni deposition, silicon substrate was treated by NH3 plasma with various flow rates to adjust the amount of inserted hydrogen and nitrogen atoms. The Ni films showed a considerable low sheet resistance around 12 Omega/square, irrespective of the NH3 plasma pre-treatment conditions. The sheet resistance of the all Ni films was decreased after annealing at 500 degrees C due to formation of a low resistive NiSi phase. NiSi films with a high flow rate of NH3 plasma pre-treatment exhibited a lower sheet resistance and smoother interface between NiSi and the Si substrate than the low flow rate of the NH3 plasma pre-treated NiSi films because lots of nitrogen atoms incorporated at grain boundary of NiSi which result in reduce total surface/interface energy of NiSi and enhancement interface characteristics.
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