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Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
- Authors
- Jeon, Hye-Ji; Maeng, W. J.; Park, Jin-Seong
- Issue Date
- Jul-2014
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Oxide semiconductor; Solution process; Thin film transistor; X-ray photoemission spectroscopy
- Citation
- CERAMICS INTERNATIONAL, v.40, no.6, pp.8769 - 8774
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 40
- Number
- 6
- Start Page
- 8769
- End Page
- 8774
- ISSN
- 0272-8842
- Abstract
- Amorphous AlZnSnO (AZTO) channel layer thin film transistors (TFTs) with various Al doping ratios were fabricated using a solution process. Electrical, structural, and optical properties were systematically investigated as a function of Al doping. At an appropriate level of Al doping (3.45 at%), optimal electrical properties of AZTO TFTs were obtained, including mobility of 2.41 cm(2)/V s and a subthreshold swing of 0.68 V/decade. From analyses of the chemical bonding states and optical band structure, this is attributed to suppression of oxygen related defect formation and a decrease of the band gap.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)