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Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석Analysis for Resistance Distribution and Sense Margin of Magnetic Tunnel Junction
- Other Titles
- Analysis for Resistance Distribution and Sense Margin of Magnetic Tunnel Junction
- Issue Date
- Jun-2014
- Publisher
- 대한전자공학회
- Citation
- 전자공학회논문지, v.37, no.1, pp.333 - 335
- Indexed
- OTHER
- Journal Title
- 전자공학회논문지
- Volume
- 37
- Number
- 1
- Start Page
- 333
- End Page
- 335
- ISSN
- 1016135X
- Abstract
- MTJ resistance variation is a serious problem for commercializing STT-MRAM, since it narrows the sense margin between high and low resistance state during read operation. Hence, the study on MTJ resistance variation is essential for improving the sence margin and commercializing STT-MRAM. In this paper, we propose a investigation on MTJ characteristics and resistance variation with combination of various causes. Also, we analysed the sense margin of MTJ according to the study of MTJ.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)