Atomic layer deposition of HfO2 thin films using H2O2 as oxidant
- Authors
- Choi, Min-Jung; Park, Hyung-Ho; Jeong, Doo Seok; Kim, Jeong Hwan; Kim, Jin-Sang; Kim, Seong Keun
- Issue Date
- May-2014
- Publisher
- ELSEVIER
- Keywords
- Atomic layer deposition; HfO2; H2O2
- Citation
- APPLIED SURFACE SCIENCE, v.301, pp.451 - 455
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 301
- Start Page
- 451
- End Page
- 455
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159956
- DOI
- 10.1016/j.apsusc.2014.02.098
- ISSN
- 0169-4332
- Abstract
- HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.
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