Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy
- Authors
- Lee, Jae Uk; Hong, Seongchul; Ahn, Jinho; Doh, Jonggul; Jeong, SeeJun
- Issue Date
- May-2014
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.3, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 32
- Number
- 3
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160043
- DOI
- 10.1116/1.4873697
- ISSN
- 1071-1023
- Abstract
- The authors evaluated the feasibility of using coherent scattering microscopy (CSM) as an actinic metrology tool by employing it to determine the critical dimension (CD) and normalized image log-slope (NILS) values of contaminated extreme ultraviolet (EUV) masks. CSM was as effective as CD scanning electron microscopy (CD-SEM) in measuring the CD values of clean EUV masks in the case of vertical patterns (nonshadowing effect); however, only the CSM could detect shadowing effect for horizontal patterns resulting in smaller clear mask CD values. Owing to weak interaction between the low-density contaminant layer and EUV radiation, the CSM-based CD measurements were not as affected by contamination as were those made using CD-SEM. Furthermore, CSM could be used to determine the NILS values under illumination conditions corresponding to a high-volume manufacturing tool.
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