The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures
- Authors
- Oh, Young-Taek; Roh, Ii-Pyo; Kino, Hisashi; Tanaka, Tetsu; Song, Yun Heub
- Issue Date
- Oct-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Curvature method; interface trap densities; mechanical stress; metal-oxide-nitride-oxide-semiconductor (MONOS) structure; residual stress
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.10, pp.4313 - 4319
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 65
- Number
- 10
- Start Page
- 4313
- End Page
- 4319
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16028
- DOI
- 10.1109/TED.2018.2865007
- ISSN
- 0018-9383
- Abstract
- We investigated the impact of mechanical stress on the cell characteristics of metal-oxide-nitride-oxide-semiconductor (MONOS) structures through experimental observations based on a curvature method for residual stress extraction and an analysis of the interface state. Residual stress induced on a substrate was observed to change from compressive to tensile depending on the tungsten process conditions; a high interface trap density was extracted under a high compressive stress environment based on a silicon bonding model. These interface trap densities were suggested as being attributable to a critical factor weakening the leakage characteristics of the MONOS structure. Besides, interface traps interrupted electron tunneling due to unintended charge trapping at the interface, which deteriorated memory characteristics indicated by a reduction in trap density. These results experimentally supported the effects of mechanical stress on device characteristics and reliability, which could be a straightforward way toward understanding the impact of stress for improved future flash memory applications.
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