Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode
- Authors
- Seung, Hyun-Min; Song, Myung-Jin; Park, Jea-Gun; Kwon, Kyoung-Cheol
- Issue Date
- Apr-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonvolatile memory; Conductive-bridging memory; Bipolar switching; Ag filament
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.7, pp.L949 - L953
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 64
- Number
- 7
- Start Page
- L949
- End Page
- L953
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160301
- DOI
- 10.3938/jkps.64.949
- ISSN
- 0374-4884
- Abstract
- We developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e., maximum memory characteristics, such as a retention-time of > 1 x 10(5) s with a memory margin of 1 x 10(4) and program/erase cycles of > 10(3) with a memory margin of 1.3 x 10(4), which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%)
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