Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler Alloy
- Authors
- Lee, Jung-Min; Kil, Gyu Hyun; Lee, Gae Hun; Choi, Chul Min; Song, Yun-Heub; Sukegawa, Hiroaki; Mitani, Seiji
- Issue Date
- Apr-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Magnetic tunnel junction; Co2FeAl; MgO; Interface insertion layer
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.8, pp.1144 - 1149
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 64
- Number
- 8
- Start Page
- 1144
- End Page
- 1149
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160306
- DOI
- 10.3938/jkps.64.1144
- ISSN
- 0374-4884
- Abstract
- The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.
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