A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays

Abstract

In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver circuit based on a decoder with parallel TFTs. All a-Si: H TFTs in the proposed gate driver have duty ratios of 50% or less to suppress the threshold voltage (V-TH) shift, but at the same time, the output can avoid a high-impedance state to resist against noises. The proposed gate driver also removes dead time, and reduces the circuit area and the number of TFTs compared with the previously reported decoder-type and demultiplexer-type integrated gate drivers. The simulation results show that the rising time and falling time are 2.47 and 2.43 mu s, respectively, with a -5 to 30V output voltage swing, which are suitable for full high-definition (full-HD) format active-matrix displays at a 120Hz frame frequency.