Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
- Authors
- Cho, Byungsu; Choi, Yonghyuk; Jeon, Heeyoung; Shin, Seokyoon; Seo, Hyungtak; Jeon, Hyeongtag
- Issue Date
- Jan-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.4, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 4
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160965
- DOI
- 10.1063/1.4862537
- ISSN
- 0003-6951
- Abstract
- We demonstrate an enhanced electrical stability through a Ti oxide (TiOx) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiOx thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiOx depend on the surface polarity change and electronic band structure evolution. This result indicates that TiOx on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160965)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.