Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
- Authors
- Shin, In-Su; Lee, Donghyun; Lee, Keon-Hoon; You, Hyosang; Moon, Dae Young; Park, Jinsub; Nanishi, Yasuishi; Yoon, Euijoon
- Issue Date
- Nov-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- MOCVD; GaN; Stress; Wafer bowing; Nano-columns; LT GaN buffer
- Citation
- THIN SOLID FILMS, v.546, pp.118 - 123
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 546
- Start Page
- 118
- End Page
- 123
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161524
- DOI
- 10.1016/j.tsf.2013.03.056
- ISSN
- 0040-6090
- Abstract
- In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire.
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