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Electrical Bistability of Organic Bistable Devices Based on Colloidal CuInS2 Quantum Dots Embedded in a Poly(N-vinylcarbazole) Layer

Authors
Park, Hun MinYun, Dong YeolKim, Sang WookKim, Tae Whan
Issue Date
Nov-2013
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.11, pp.1 - 4
Indexed
SCIE
SCOPUS
Journal Title
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume
52
Number
11
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161581
DOI
10.7567/JJAP.52.11NK02
ISSN
0021-4922
Abstract
Organic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarbazole) (PVK) layer were fabricated by spin coating. Current-voltage (I-V) curves of Al/colloidal hybrid CIS QD-PVK/indium tin oxide devices at 300 K showed that the current bistability with an ON/OFF ratio of 1 x 10(3) is larger than that of OBDs without CIS QDs. The number of retention cycles of the ON and OFF states for the OBDs was above 1 x 10(5). The carrier transport mechanisms of the OBDs were described on the basis of the I-V results.
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