Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices
- Authors
- Lee, Seok-Hee; Choi, Rino; Choi, Changhwan
- Issue Date
- Sep-2013
- Publisher
- ELSEVIER
- Keywords
- High-kappa gate dielectric; Metal gate; Flat-band voltage; CMOS integration
- Citation
- MICROELECTRONIC ENGINEERING, v.109, pp.160 - 162
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 109
- Start Page
- 160
- End Page
- 162
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162015
- DOI
- 10.1016/j.mee.2013.03.056
- ISSN
- 0167-9317
- Abstract
- We investigated the effects of gas flow rates during sputtering and thickness of TIN metal gate on the equivalent oxide thickness (EOT) and flat band voltage (V-FB) in the gate-first (GF) processed metal oxide semiconductor (MOS) devices with HfO2 and HfSiON-based gate dielectrics. For both HfO2 and HfiSON devices, more metallic TIN causes thinner EOT with lower V-FB while higher V-FB is observed along with thicker EOT for nitrogen-rich TIN case. Also, thicker TiN induces more positive V-FB shift. However, for HfSiON, amount of V-FB shift and EOT reduction is smaller than those of HfO2-based device, resulting from stronger immunity of Hf-Si bonding against oxygen vacancy generation during thermal process.
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