One-step fabrication and photoluminescence of alumina-sheathed GaN nanowires
- Authors
- Kwak, Dong Sub; Kwon, Yong Jung; Cho, Hong Yeon; Lee, Chongmu; Kim, Hyoun Woo
- Issue Date
- Aug-2013
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- GaN; Nanowires; Alumina; Photoluminescence; Growth mechanism
- Citation
- Journal of Ceramic Processing Research, v.14, no.4, pp.453 - 458
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of Ceramic Processing Research
- Volume
- 14
- Number
- 4
- Start Page
- 453
- End Page
- 458
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162270
- DOI
- 10.36410/jcpr.2013.14.4.453
- ISSN
- 1229-9162
- Abstract
- Gallium nitride (GaN)/alumina (Al2O3) core-shell structures were successfully synthesized by a simple and one-step thermal evaporation method. We characterized their morphology, microstructures, and optical properties by SEM, TEM, EDX, and photoluminescence (PL). The core-shell structures were comprised of a core of single crystalline, GaN nanowires surrounded by a shell of Al2O3 tubular structures. We proposed a base-growth process as the dominant mechanism for the growth of the core/shell nanowires. We have discussed the possible reason for the preferential formation of the Al2O3 shells on the outside of the core-shell structures. In regard to the core/shell structures, an emission peak of 3.3 eV was observed in the room-temperature PL measurements in addition to the GaN-associated peaks, and was attributed to the Al2O3 shell.
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