Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Multi-level resistive switching observations in asymmetric Pt/Ta2O5-x/TiOxNy/TiN/Ta2O5-x/Pt multilayer configurations
- Issue Date
- Aug-2013
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.103, no.6, pp 1 - 4
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 103
- Number
- 6
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- We examine multilevel (ML) resistance switching properties in a Pt/Ta2O5-x/TiOxNy/TiN/Ta2O5-x/Pt matrix, in which two bipolar resistive switching elements Pt/Ta2O5-x/TiOxNy and TiN/Ta2O5-x/Pt are anti-serially and electrically connected. The ML features for the three assigned, distinguishable resistance states are clearly identified by using an I-V device operation scheme, indicating that the middle TiN and TiOxNy electrodes are crucial for adjusting ML resistance states. Experimental observations suggest that the ML switching events rely on electrically induced oxygen ion drifts at interfaces between the top/bottom Ta2O5-x and middle TiN/TiOxNy layers.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)