Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
- Authors
- Park, Taehee; Park, Eunkyung; Ahn, Juwon; Lee, Jungwoo; Lee, Jongtaek; Lee, Sang-hwa; Kim, Jae-yong; Yi, Whikun
- Issue Date
- Jun-2013
- Publisher
- 대한화학회
- Keywords
- n-Type ZnO nanorod; Porous silicon; Photoluminescence; Electroluminescence; Field emission
- Citation
- Bulletin of the Korean Chemical Society, v.34, no.6, pp 1779 - 1782
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Bulletin of the Korean Chemical Society
- Volume
- 34
- Number
- 6
- Start Page
- 1779
- End Page
- 1782
- ISSN
- 0253-2964
1229-5949
- Abstract
- N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/mu m were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
- 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Yi, Whi kun
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF CHEMISTRY)