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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Siopen access
- Authors
- Park, Taehee; Park, Eunkyung; Ahn, Juwon; Lee, Jungwoo; Lee, Jongtaek; Lee, Sang-hwa; Kim, Jae-yong; Yi, Whikun
- Issue Date
- Jun-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- n-Type ZnO nanorod; Porous silicon; Photoluminescence; Electroluminescence; Field emission
- Citation
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.34, no.6, pp.1779 - 1782
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Volume
- 34
- Number
- 6
- Start Page
- 1779
- End Page
- 1782
- ISSN
- 0253-2964
- Abstract
- N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/mu m were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
- 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
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Related Researcher
- Kim, Jae yong
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)