Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses
DC Field | Value | Language |
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dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Park, Sang-Hee Ko | - |
dc.contributor.author | Hwang, Chi-Sun | - |
dc.contributor.author | Shin, Hyun Soo | - |
dc.contributor.author | Kim, Daehwan | - |
dc.contributor.author | Bae, Jonguk | - |
dc.contributor.author | Chin, Byung Doo | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T09:45:54Z | - |
dc.date.available | 2022-07-16T09:45:54Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162706 | - |
dc.description.abstract | Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in-situ/ex-situ measurement and chemical/physical analysis. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.title | Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1002/j.2168-0159.2013.tb06453.x | - |
dc.identifier.scopusid | 2-s2.0-84905277284 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.44, no.1, pp.1229 - 1231 | - |
dc.relation.isPartOf | Digest of Technical Papers - SID International Symposium | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 44 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1229 | - |
dc.citation.endPage | 1231 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Buffer layers | - |
dc.subject.keywordPlus | Interface states | - |
dc.subject.keywordPlus | Interfaces (materials) | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Bias-temperature stress | - |
dc.subject.keywordPlus | Device instabilities | - |
dc.subject.keywordPlus | Electrical performance | - |
dc.subject.keywordPlus | Flexible device | - |
dc.subject.keywordPlus | Flexible substrate | - |
dc.subject.keywordPlus | Oxide semiconductor thin film transistors | - |
dc.subject.keywordPlus | Polyimide substrate | - |
dc.subject.keywordPlus | Water penetration | - |
dc.subject.keywordPlus | Optical waveguides | - |
dc.subject.keywordAuthor | Buffer layers | - |
dc.subject.keywordAuthor | Device Instability | - |
dc.subject.keywordAuthor | Flexible device | - |
dc.subject.keywordAuthor | Oxide semiconductor thin film transistor | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/j.2168-0159.2013.tb06453.x | - |
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