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Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses
- Authors
- Ok, Kyung-Chul; Park, Sang-Hee Ko; Hwang, Chi-Sun; Shin, Hyun Soo; Kim, Daehwan; Bae, Jonguk; Chin, Byung Doo; Park, Jin-Seong
- Issue Date
- Jun-2013
- Publisher
- Blackwell Publishing Ltd
- Keywords
- Buffer layers; Device Instability; Flexible device; Oxide semiconductor thin film transistor
- Citation
- Digest of Technical Papers - SID International Symposium, v.44, no.1, pp.1229 - 1231
- Indexed
- SCOPUS
- Volume
- 44
- Number
- 1
- Start Page
- 1229
- End Page
- 1231
- ISSN
- 0097-966X
- Abstract
- Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in-situ/ex-situ measurement and chemical/physical analysis.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)