Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses

Abstract

Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in-situ/ex-situ measurement and chemical/physical analysis.