Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array
- Authors
- Lee, Jung Min; Song, Yun-Heub; Saito, Yuta; Sutou, Yuji; Koike, Junichi
- Issue Date
- May-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- PCRAM; Selective device; GST; GCT
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.9, pp.1258 - 1263
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 62
- Number
- 9
- Start Page
- 1258
- End Page
- 1263
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162896
- DOI
- 10.3938/jkps.62.1258
- ISSN
- 0374-4884
- Abstract
- A selective switching device utilizing a phase-change material was investigated. In this work, we present a new concept to realize serially a selective switching and memory operation in a multiple phase-change memory with only phase-change materials without any semiconductor switching device. A phase-change material for selective switching can be expected to have a higher resistance amorphous phase and to show lower melting and crystallization temperatures than a phase-change material for a memory. Here, we present a structural method to obtain the above requirements. In addition, we confirm the switching operation by a selective current pulse for multiple phase-change materials from the experiment. From these results, we expected that one of the multiple phasechange materials can be replaced in a switching device without the need for an additional selective device, and that such a device would be feasible for 3-dimensional PCM architecture.
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