Temperature-controlled synthesis and characterization of Bi4Ge3O12 nanowires
- Authors
- Kwak, Dong Sub; Kwon, Yong Jung; Na, Han Gil; Tran Van Khai; Lee, Chongmu; Kim, Hyoun Woo
- Issue Date
- Apr-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Bi4Ge3O12; Nanowires; Photoluminescence
- Citation
- CHEMICAL ENGINEERING JOURNAL, v.222, pp.337 - 344
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL ENGINEERING JOURNAL
- Volume
- 222
- Start Page
- 337
- End Page
- 344
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163120
- DOI
- 10.1016/j.cej.2013.02.033
- ISSN
- 1385-8947
- Abstract
- Varying the heating temperature of a mixture of Bi and Ge powders, we have successfully prepared Bi4Ge3O12 nanowires. The growth at 600 degrees C was mainly controlled via a vapor-liquid-solid process, whereas the growth at 800 degrees C was dominated by a vapor-solid mechanism. Although 600 degrees C-grown nanowires were amorphous, being comprised of Bi, Ge, O, and Au elements, the Bi and Au elements prevalently resided in the tip, playing a catalytic role in the nanowire growth. For 800 degrees C-grown nanowires, both the stem and tip were mainly comprised of cubic Bi-4(GeO4)(3) phase with additional Bi2O3 and GeO2 phases. Photoluminescence spectrum of 800 degrees C-grown nanowires exhibited GeO2-related emission band, as well as Bi4Ge3O12-related ones. The magnetic measurements showed that the Bi4Ge3O12 nanowires exhibited a hysteresis loop, indicating ferromagnetic behavior.
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