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Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation
- Authors
- Yeo, C. S.; Chung, Kwun-Bum; Song, Jonghan; Chae, Keun Hwa; Park, Jin-Seong; Song, Junghoon; Park, Sang Han; Cho, Mann-Ho
- Issue Date
- Mar-2013
- Publisher
- 한국물리학회
- Keywords
- Ion irradiation; TiO2-x; Hydrogen ion
- Citation
- Journal of the Korean Physical Society, v.62, no.5, pp 781 - 786
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 62
- Number
- 5
- Start Page
- 781
- End Page
- 786
- ISSN
- 0374-4884
1976-8524
- Abstract
- The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between similar to 10(14) and similar to 10(15) atom/cm(2) at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)